Author(s)

Peijie Feng, Prasanta Ghosh

Department of Electrical Engineering and Computer Science, Syracuse University, Syracuse, USA.

In this paper, we propose multi-fin FET design techniques targeted for RF applications. Overlap and underlap design configuration in a base FinFET are compared first and then multi-fin device (consisting of transistor unit up to 50) is studied to develop design limitations and to evaluate their effects on the device performance. We have also investigated the impact of the number of fins (up to 50) in multi-fin structure and resulting RF parameters. Our results show that as the number of fin increases, underlap design compromises RF performance and short channel effects. The results provide technical understanding that is necessary to realize new opportunities for RF and analog mixed-signal design with nanoscale FinFETs.

FinFET; Analog; RF; Source/Drain Extension Region Engineering; Simulation; Multi-Fin FET

P. Feng and P. Ghosh, "Design Consideration in the Development of Multi-Fin FETs for RF Applications," World Journal of Nano Science and Engineering, Vol. 2 No. 2, 2012, pp. 88-91. doi: 10.4236/wjnse.2012.22011.