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Deep Traps and Parasitic Effects in Al
0.25
Ga
0.75
N/GaN/SiC Heterostructures with Different Schottky Contact Surfaces
(Articles)
Salah Saadaoui
,
Olfa Fathallah
,
Mohamed Mongi Ben Salem
,
Christophe Gaquière
,
Hassen Maaref
Open Access Library Journal
Vol.2 No.8
,August 27, 2015
DOI:
10.4236/oalib.1101562
1,285
Downloads
2,117
Views
Citations
Characteristics of AlGaN/GaN HEMTs for Detection of MIG
(Articles)
Hasina F. Huq
,
Hector Trevino II
,
Jorge Castillo
Journal of Modern Physics
Vol.7 No.13
,September 23, 2016
DOI:
10.4236/jmp.2016.713154
1,914
Downloads
4,401
Views
Citations
Electrical Characterization of Traps in AlGaN/GaN FAT-HEMT’s on Silicon Substrate by C-V and DLTS Measurements
(Articles)
M. Charfeddine
,
Malek Gassoumi
,
H. Mosbahi
,
C. Gaquiére
,
M. A. Zaidi
,
H. Maaref
Journal of Modern Physics
Vol.2 No.10
,October 20, 2011
DOI:
10.4236/jmp.2011.210152
8,479
Downloads
17,903
Views
Citations
2-D Theoretical Model for Current–Voltage Characteristics in AlGaN/GaN HEMT’s
(Articles)
Manel Charfeddine
,
Hafedh Belmabrouk
,
Mohamed Ali Zaidi
,
Hassen Maaref
Journal of Modern Physics
Vol.3 No.8
,August 15, 2012
DOI:
10.4236/jmp.2012.38115
10,930
Downloads
18,898
Views
Citations
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customer@scirp.org
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