Prof. Mehdi Anwar

Electrical and Computer Engineering

University of Connecticut, USA

Email: anwara@engr.uconn.edu

Qualifications

1988 Ph.D., Electrical & Computer Engineering, Clarkson University, USA

Publications (Selected)

1. Tariq Manzur and Mehdi Anwar, “Strain induced active layer design of GaN – THz quantum cascade lasers,” International Journal of High Speed Electronics and Systems, vol. 20, No. 3, pp. 621-627, 2011.
2. S. Wasterlain, D. Candusso, D. Hissel, F. Harel, P. Bergman, P. Menard and A. F. M. Anwar, “Study of temperature, air dew point temperature and reactant flow effects on proton exchange membrane fuel cell performances using electrochemical spectroscopy and voltammetry techniques,” Journal of Power Sources, vol. 195, Issue 4, pp. 984-993, 2010.
3. F. M. Anwar, Richard T. Webster and Kurt V. Smith, “Bias induced strain in AlGaN/GaN heterojunction field effect transistors and its implication,” Applied Physics Letters, vol. 88, pp. 203510-1 – 203510-3, May 15, 2006.
4. Elias W. Faraclas and A. F. M. Anwar, “AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics,” Solid-State Electronics, vol. 50, pp. 1051-1056, May/June 2006.
5. F. M. Anwar and Elias W. Faraclas, “Schottky barrier height in AlGaN/GaN heterostructures,” Solid-State Electronics, vol. 50, pp. 1041-1045, May/June 2006.
6. F. M. Anwar, Syed S. Islam and Richard T. Webster, “Response to "Comment on `Carrier trapping and current collapse mechanism in GaN metal-semiconductor field effect transistors,” Applied Physics Letters, vol. 86, pp. 016102-1 – 016102-2, 2005.
7. Elias Faraclas, Richard T. Webster, George Brandes and A. F. M. Anwar, “Dependence of RF performance of GaN/AlGaN HEMTs upon AlGaN barrier layer variation,” International Journal of High Speed Electronics and Systems, Vol. 14, No. 3, pp.750-755, 2004.
8. Syed S. Islam and A.F.M. Anwar, “SPICE model of AlGaN/GaN HEMTs and simulation of VCO and power amplifier,” International Journal of High Speed Electronics and Systems, Vol. 14, No. 3, pp. 853-859, 2004.
9. Richard T. Webster and A. F. M. Anwar, “Noise in Metamorphic AlGaAsSb/InGaAs/AlGAAsSb HEMTs,” Solid-State Electronics, vol. 48, p. 2007, 2004.
10. Elias W. Faraclas, Syed S. Islam and A. F. M. Anwar, “Growth Parameter Dependence of Gain Compression in AlGaN/GaN HFETs,” Solid-State Electronics, vol. 48, p. 1849, 2004.