Prof.
Krishna C. Mandal
Electrical
Engineering Department
University
of South Carolina, Columbia, USA
E-mail: MANDALK@cec.sc.edu
Qualifications
1988
Ph.D., Indian Institute of Technology, Kharagpur, India
Publications
(selected)
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Mohammad A. Mannan, Khai V. Nguyen,
Rahmi O. Pak, Cihan Oner, and Krishna C. Mandal, “Deep Levels in n-Type
4H-Silicon Carbide Epitaxial Layers Investigated by Deep Level Transient
Spectroscopy and Isochronal Annealing Studies,” IEEE Transactions on Nuclear
Science, 63, 1083-1090, 2016.
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Khai V. Nguyen and Krishna C.
Mandal, “Ru-induced Deep Levels in Ru/4H-SiC Epilayer Schottky Diodes by Deep
Level Transient Spectroscopy,” ECS Journal of Solid State Science and
Technology, 5, P3078-P3081, 2016.
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Rahmi Pak and Krishna C. Mandal,
"Defect Levels in Nuclear Detector Grade Cd0.9Zn0.1Te Crystals," ECS
Journal of Solid State Science and Technology, 5, P3037-P3040, 2016.
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Sandip Das, Sandeep Chaudhuri, and
Krishna C. Mandal, "Deep Level Studies in High-Resistive Gallium Phosphide
Single Crystals," ECS Journal of Solid State Science and Technology, 5,
P3059-P3063, 2016.
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Sandip Das, Raghu N. Bhattacharya,
and Krishna C. Mandal, “Performance limiting factors of Cu2ZnSn(SxSe1-x)4 solar
cells prepared by thermal evaporation,” Solar Energy Materials and Solar Cells,
144, 347-351, 2016.
-
C.
R. Schmidtlein, J. N. Turner, M. O. Thompson, K. C. Mandal, I. Haggstrom, J.
Zhang, J. L. Humm, D. H. Feiglin, and A. Krol., “Performance modeling of a
wearable brain PET (BET) camera,” SPIE Medical Imaging Conference, Proc. SPIE
9788, 978806-1-11, 2016.
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Sandip Das, Krishna
C. Mandal, and Raghu N. Bhattacharya, Invited Book Chapter: Chapter 2 -
“Earth-Abundant Cu2ZnSn(S,Se)4 (CZTSSe) Solar Cells,” Book Title: Semiconductor
Materials for Solar Photovoltaic Cells, Springer Series in Materials Science,
Editors: M. Parans Paranthaman, Winnie Wong-Ng, and Raghu N. Bhattacharya, ISBN
978-3-319-20330-0, Vol. 218, pp. 25-74, 2015.
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Khai V. Nguyen,
Mohammad A. Mannan, and Krishna C. Mandal, “Improved n-type 4H-SiC Epitaxial Radiation
Detectors by Edge Termination,” IEEE Transactions on Nuclear Science, 62,
3199-3206, 2015.
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Yanhao Tang, Wei
Xie, Krishna C. Mandal, John A. McGuire, and C.W. Lai, “Optical and spin
polarization dynamics in GaSe nanoslabs,” Physical Review B 91,
195429-1195429-5, 2015.
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Yanhao Tang, Wei
Xie, Krishna C. Mandal, John A. McGuire, and Chih Wei Lai," Linearly
polarized remote-edge luminescence in GaSe nanoslabs," Physical Review
Applied, 4, 034008-1034008-7, 2015.
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Yanhao Tang, Wei
Xie, Krishna C. Mandal, John A. McGuire, and Chih Wei Lai,"Exciton spin
dynamics in GaSe," Journal of Applied Physics, 118, 113103-1113103-8,
2015.
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Piyas Samanta and
Krishna C. Mandal, “Hole injection and dielectric breakdown in 6H-SiC and
4H-SiC metal-oxide-semiconductor structures during substrate electron injection
via Fowler-Nordheim tunneling,” Solid-State Electronics, 114, 60-68, 2015.
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Sandeep K.
Chaudhuri, Khai Nguyen, Rahmi O. Pak, Liviu Matei, Vladimir Buliga, Michael
Groza, Arnold Burger, and Krishna C. Mandal, “Large Area Cd0.9Zn0.1Te Pixelated
Detector: Fabrication and Characterization,” IEEE Transactions on Nuclear
Science, 61,793-798, 2014.
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Krishna C. Mandal,
Sandeep K. Chaudhuri, and Khai Nguyen, “Correlation of Deep Levels with
Detector Performance in 4H-SiC Epitaxial Schottky Barrier Alpha Detectors,”
IEEE Transactions on Nuclear Science, 61, 2338 - 2344, 2014.
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Sandip Das, Sandeep
K. Chaudhuri, Raghu N. Bhattacharya, and Krishna C. Mandal, “Defect levels in
Cu2ZnSn(S1-xSex)4 solar cells probed by current mode deep level transient
spectroscopy, Applied Physics Letters, 104, 192106-1-4, 2014.
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Mohammad A. Mannan,
Sandeep K. Chaudhuri, Khai Nguyen, and Krishna C. Mandal, “Effect of Z1/2, EH5 and
Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky
detectors: Alpha spectroscopy and deep level transient spectroscopy studies,”
Journal of Applied Physics, 115, 224504-1-6, 2014.
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Sandip Das and
Krishna C. Mandal, “Growth and characterization of kesterite Cu2ZnSn(SxSe1-x)4 crystals
for photovoltaic applications,” Materials Research Bulletin, 57, 135-139, 2014.
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Sandip K. Das and
Krishna C. Mandal, “Optical down-conversion in doped ZnSe:Tb3+ nanocrystals,”
Nanoscale, 5, 913-915, 2013.
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Krishna C. Mandal,
Peter G. Muzykov, Sandeep K. Chaudhuri, and J. Russell Terry, “Low energy x-ray
and γ-ray detectors fabricated on n-type 4H-SiC epitaxial layer,” IEEE
Transactions on Nuclear Science, 60, 2888-2893, 2013.
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Sandeep
K. Chaudhuri, Ramesh M. Krishna, Kelvin J. Zavalla, Liviu Matei, Vladimir
Buliga, Michael Groza, Arnold Burger, and Krishna C. Mandal, “Cd0.9Zn0.1Te
Crystal Growth and Fabrication of Large Volume Single-Polarity Charge Sensing
Gamma Detectors,” IEEE Transactions on Nuclear Science, 60, 2853-2858, 2013.